| PART |
Description |
Maker |
| BCX52 BCX53 |
PNP Silicon AF Transistors(PNP硅放大器晶体 硅晶体管自动对焦进步党（民进党硅放大器晶体管
General Purpose Transistors - SOT89; VCEO=80V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=60V; hFE=40...250
|
SIEMENS AG
Infineon
|
| AL0410S470M-S-A AL0204AT3R3J-S-B AL0410S470M-S-B-N |
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 390 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 470 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 680 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 560 uH, GENERAL PURPOSE INDUCTOR
|
YAGEO CORP
|
| 2N3906 2N3905 ON0043 2N3905-D |
General Purpose Transistors PNP Silicon
Motorola Preferred Device
From old datasheet system
General Purpose Transistors(PNP Silicon)
|
ONSEMI[ON Semiconductor]
|
| BC848CDXV6T5 BC847CDXV6T1 BC847CDXV6T5 BC848CDXV6T |
General Purpose NPN Transistor
Dual General Purpose Transistors
|
ONSEMI[ON Semiconductor]
|
| R7S00212 R7S00412 R7S00612 R7S00812 R7S01012 R7S01 |
200V, 1200A general purpose single diode
400V, 1200A general purpose single diode
600V, 1200A general purpose single diode
800V, 1200A general purpose single diode
1000V, 1200A general purpose single diode
1200V, 1200A general purpose single diode
1400V, 1200A general purpose single diode
1600V, 1200A general purpose single diode
1800V, 1200A general purpose single diode
2000V, 1200A general purpose single diode
2200V, 1200A general purpose single diode
|
Powerex Power Semiconductors
|
| R7S00208 R7S00408 R7S00608 R7S00808 R7S01008 R7S01 |
200V, 800A general purpose single diode
400V, 800A general purpose single diode
600V, 800A general purpose single diode
800V, 800A general purpose single diode
1000V, 800A general purpose single diode
1200V, 800A general purpose single diode
1400V, 800A general purpose single diode
1600V, 800A general purpose single diode
1800V, 800A general purpose single diode
2000V, 800A general purpose single diode
2200V, 800A general purpose single diode
|
Powerex Power Semiconductors
|
| RLC1014-471K RLS608-1R0K RLC1014-121K RLC1014-221K |
1 ELEMENT, 470 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 120 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22000 uH, GENERAL PURPOSE INDUCTOR
|
|
| BCP69 BCP69-10 BCP69-16 BCP69-25 |
PNP Silicon AF Transistor
General Purpose Transistors - SOT223; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT223; VCEO=20V; hFE=85..160
General Purpose Transistors - SOT223; VCEO=20V; hFE=100..250
|
Infineon Technologies A...
Infineon Technologies AG
|
| BCX54 BCX55 BCX55-16 BCX55-10 |
NPN Silicon AF Transistors(NPN硅放大器晶体
General Purpose Transistors - SOT89; VCEO=60 V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=45V; hFE 40..250
|
SIEMENS AG
Infineon
|
| JC557 JC556_557_558_3 JC556 JC556B JC557B JC558 JC |
PNP general purpose transistors
From old datasheet system
PNP general purpose transistor(PNP通用型晶体管)
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| MSC82306 2765 |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS 射频
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
|
