| PART |
Description |
Maker |
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7 |
From old datasheet system
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44
Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| P3C1041-10TI P3C1041-10TC P3C1041-10JC P3C1041-10J |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Pyramid Semiconductor, Corp.
|
| IDT71028 IDT71028S12Y IDT71028S15Y IDT71028S17Y ID |
CMOS STATIC RAM 1 MEG (256K x 4-BIT)
|
IDT[Integrated Device Technology]
|
| P3C1041-10JC P3C1041-10JI P3C1041-10TC P3C1041-10T |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
|
Pyramid Semiconductor Corporation
|
| IS62LV2568LL-100H |
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM 256K × 8低功耗和低成本吓的CMOS静态RAM
|
Integrated Silicon Solution, Inc.
|
| IS62WV2568BLL-55BLI IS62WV2568ALL-70BI IS62WV2568B |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PBGA36
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 256K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| IS62WV25616BLL-55BLI IS62WV25616BLL-55TLI IS62WV25 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM 256K X 16 STANDARD SRAM, 70 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| NM27C020 NM27C020QE150 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy]
2097152-Bit (256K x 8) UV Erasable CMOS EPROM
2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM
2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT28F160S3 |
2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16闪速存储器)
|
Micron Technology, Inc.
|
