| PART |
Description |
Maker |
| BLM8G0710S-45AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM8G0710S-30PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-20PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| CGY181 |
PCN/PCS 2 stage Power Amplifier MMIC
|
Infineon
|
| Q68000-A6887 CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| Q68000-A8884 CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q68000-A4444 CGY40 |
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
