PART |
Description |
Maker |
MMBF2202PT1 MMBF2202P |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 Power MOSFET 300 mAmps / 20 Volts P−Channel SC/SOT
|
ON Semiconductor
|
RF1K49154 FN4143 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET 2A 60V 0.130 Ohm Dual N-Channel LittleFET Power MOSFET From old datasheet system 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
|
INTERSIL[Intersil Corporation]
|
LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
Leshan Radio Company
|
MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23
|
ON Semiconductor
|
MMBF0201NLT1 MMBF0201NL MMBF0201NLT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
2N7002LT3 2N7002LT1 L2N7003LT1 |
Small Signal MOSFET 115 mAmps 60 Volts Small Signal MOSFET 115 mAmps/ 60 Volts Small Signal MOSFET 115 mAmps, 60 Volts 小信号MOSFET 115 mAmps0伏特
|
http:// LRC[Leshan Radio Company] Leshan Radio Company, Ltd.
|
IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp. Integrated Device Technology, Inc. IRF[International Rectifier]
|
MMBF0201NLT106 MMBF0201NLT1G MMBF0201NLT1 |
Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23
|
ONSEMI[ON Semiconductor]
|
MMBF170LT1 MMBF170LT1G MMBF170LT3 MMBF170LT3G |
Power MOSFET 500 mAmps, 60 Volts Power MOSFET 500 mA, 60 V
|
ONSEMI[ON Semiconductor]
|