| PART |
Description |
Maker |
| BXA30-48S3V3/8-F BXA30-48S3V3-1 BXA30-12S05-F BXA3 |
Low on resistance quad, SPDT, wide-bandwidth video switch
Adaptive single 3.4 Gbps TMDS/HDMI signal equalizer
14 bit dual supply bus transceiver level translator, a side series resistor, 2 bit I²C lines
Low voltage 0.5O max quad SPDT switch with break before make feature
Low voltage 0.5 O max quad SPDT switch with break-before-make feature
Low voltage 0.5O max dual SPDT switch with break before make feature
Low voltage 4 O SPDT switch
Low voltage 0.5 O max dual SPDT switch with break-before-make
Low voltage high bandwidth Quad SPDT switch DC至DC转换
Low Voltage 0.5 Ohm Max, quad SPDT switch with break-before-make feature DC至DC转换
DC to DC Converter DC至DC转换
Low voltage high bandwidth dual SPDT switch DC至DC转换
|
Jiangsu Changjiang Electronics Technology Co., Ltd.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| PTV111-4425A-B103 PTV111-4425A-B104 PTV111-1217A-A |
Potentiometer; Resistance Max:10kohm; Resistance Tolerance: /- 20 %; Power Rating:0.05W; Voltage Rating:50 VAC, 20VDC; Series:PTV111 RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.05 W, 10000 ohm
11mm Potentiometer RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.05 W, 100000 ohm
12 mm Potentiometer
12 mm Potentiometer
|
Bourns, Inc.
Bourns Electronic Solutions
Bourns Electronic Solut...
|
| 2SK3367 |
Low on-resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 18 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3365 |
Super low on-state resistance: RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3433 |
Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS= 10 V, ID = 42 A)
|
TY Semiconductor Co., L...
|
| 2SK3434 |
Super low on-state resistance: RDS(on)1 = 20m MAX. (VGS= 10 V, ID = 24A)
|
TY Semiconductor Co., L...
|
| 2SK3109 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3483 |
N-Channel MOSFET
Super low on-state resistance: RDS(on)1 = 52m MAX. Low Ciss: Ciss = 2300 pF TYP.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SK3899 |
Low On-state resistance RDS(on)1 = 5.3m MAX.Low C iss: C iss = 5500 pF TYP.
N-Channel MOSFET
|
TY Semiconductor Co., L...
TY Semicondutor
|
| 2SK3511 |
Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| 2SK3902 |
Low On-state resistance RDS(on)1 = 21m MAX. Low C iss: C iss =1200 pF TYP.
|
TY Semiconductor Co., Ltd
|
