PART |
Description |
Maker |
IRKT41-04 IRKT41-10 IRKT41-14 IRKT41-12 IRKT41-06 |
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1000 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
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Vishay Semiconductors
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2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6 |
Silicon Controlled Rectifier 16A 400V Darlington Transistors NPN Silicon Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS
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ONSEMI[ON Semiconductor]
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S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V. 10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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General Electric Solid State ETC[ETC]
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CS218-35D CS218-35PB CS218-35B CS218-35N CS218-35M |
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 400 V, SCR, TO-218 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 200 V, SCR, TO-218 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 600 V, SCR, TO-218 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 800 V, SCR, TO-218 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1000 V, SCR, TO-218 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1200 V, SCR, TO-218
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Central Semiconductor Corp. Central Semiconductor, Corp.
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BYV28-50 BYV28-600 BYV28 BYV28-500 BYV28-100 BYV28 |
From old datasheet system Ultra fast low-loss controlled avalanche rectifiers 1.9 A, 50 V, SILICON, RECTIFIER DIODE Ultra fast low-loss controlled avalanche rectifier(超快速低损耗控制的雪崩整流 1.9 A, 200 V, SILICON, RECTIFIER DIODE
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage Silicon Controlled Rectifiers
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SemiWell Semiconductor
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NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A. Silicon Controlled Rectifiers Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
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NTE[NTE Electronics]
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2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92 Silicon Controlled Rectifier .8A 25V Thyristor .8A 200V Thyristor .8A 50V
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ONSEMI[ON Semiconductor]
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CS220-8N CS220-8B CS220-8D CS220-8M CENTRALSEMICON |
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 600 V, SCR, TO-220AB SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 800 V, SCR, TO-220AB SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 200 V, SCR, TO-220AB SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 400 V, SCR, TO-220AB Leaded Thyristor SCR
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Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
BY527 BY527_1 |
Controlled avalanche rectifier(控制的雪崩整流器) SILICON, RECTIFIER DIODE From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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BYV27-600 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV2 |
Ultra fast low-loss controlled avalanche rectifiers 1.25 A, 300 V, SILICON, RECTIFIER DIODE 1/2" NPT Bracket; Style: Bracket; Applicable Model: LU7 / LHE-A 1.3 A, 100 V, SILICON, RECTIFIER DIODE From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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