PART |
Description |
Maker |
IS42LS32400A IS42LS16800A-10B IS42LS16800A-10TI IS |
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|
IS42S16160B IS42S16160B-6T IS42S16160B-7BL IS42S16 |
32MEG X 8, 16MEG X16 256-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位(多银行,多层次,突发)闪存32兆位00万16)移动存储芯片,1.8V电源多芯片封 CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 ER 23C 16 12 8 4 SKT RECP WALL CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM From old datasheet system
|
STMicroelectronics N.V. ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics ST Microelectronics
|
M69KB128AA70AW8 M69KB128AA70CW8 M69KB128AA70DW8 M6 |
128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
|
STMicroelectronics
|
M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics STMicroelectronics
|
M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
M58LR128FB85ZB6T |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST Microelectronics
|