PART |
Description |
Maker |
2SK904 2SK1212 2SK1663 2SK2079 2SK1553 2SK1105 |
(2SKxxxx) MOSFETs
|
Fuji Semiconductors
|
RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
BC264A BC264B BC264C BC264D BC264 |
N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS N Channel Junction Field Effect Transistors
|
NXP Semiconductors Philips Semiconductors
|
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOSField Effect Transistor 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
OH3075U |
Hallogic Hall-effect Sensors MAGNETIC FIELD SENSOR-HALL EFFECT, -25-25mT, 100-400mV, RECTANGULAR, THROUGH HOLE MOUNT
|
TT electronics OPTEK Technology
|
ATS137 ATS137-P ATS137-PG-7-A ATS137-PG-7-B ATS137 |
SINGLE HALL EFFECT SWITCH MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, 700mV, RECTANGULAR, THROUGH HOLE MOUNT SINGLE HALL EFFECT SWITCH 单个霍尔效应开
|
Diodes, Inc. 磁阻传感 Diodes Inc. DIODES[Diodes Incorporated]
|
SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|