| PART |
Description |
Maker |
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| MSA-2035 MSA-2011 |
Silicon Bipolar RFIC Amplifiers(硅双极型射频电路放大
(MSA-20xx) Cascadable Silicon Bipolar MMIC Amplifier
|
Agilent(Hewlett-Packard)
|
| UPC1652G |
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER
MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOP,8PIN,PLASTIC
From old datasheet system
|
NEC Corp.
NEC Electron Devices
|
| UPC2766GR UPC2766GR-E1 UPC2766GS UPC2766GS-E1 PC27 |
Bipolar Analog Integrate Circuit(双极模拟集成电路)
WIDE BAND IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER
QUADRATURE DEMODULATOR,BIPOLAR,SOP,8PIN,PLASTIC
From old datasheet system
|
NEC Corp.
NEC Electron Devices
NEC[NEC]
|
| TLE4945-2G TLE4905 TLE4905G TLE4935 TLE4935-2G TLE |
Hall Sensors - Bipolar Hall IC switch (SOT-89 package)
Hall Sensors - Bipolar Hall IC latch (SOT-89 package)
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
Bipolar Hall IC Switches for Magnetic Field Applications(用于磁场应用的双极霍尔芯片开
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| TC2015 TC2014 |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55A (20 to 60 times lower than in bipolar regulators!).
|
Microchip
|
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KT234510 KT234505 |
Split-dual bipolar transistor module. 100A, 600V.
Split-Dual Bipolar Power Module (100 Amperes/600 Volts)
|
POWEREX[Powerex Power Semiconductors]
Powerex Power Semicondu...
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| MC34114DW MC34114P |
TELEPHONE SPEECH CIRCUIT,BIPOLAR,SOP,20PIN,PLASTIC
TELEPHONE SPEECH CIRCUIT,BIPOLAR,DIP,18PIN,PLASTIC
From old datasheet system
|
Motorola Semiconductor Products Inc
|
