| PART |
Description |
Maker |
| HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation.
|
| HN29W25611T-50 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| K9K2G08U0A |
256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| LE25FU206 LE25FU206MA |
2M-bit Serial Flash Memory
256M X 8 FLASH 2.7V PROM, PDSO8
|
Sanyo Semicon Device
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| ULQ2436M 2436 |
COUNTDOWN POWER TIMER
COUNTDOWNPOWERTIMER
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
Audio Sample Rate Converter IC; IC Function:Audio Sample Rate Converter IC; Package/Case:28-SOIC; Leaded Process Compatible:No; No. of Channels:2; Operating Temp. Max:85 C; Operating Temp. Min:-40 C RoHS Compliant: Yes 的CountDown电源定时
|
ALLEGRO[Allegro MicroSystems]
AllegroMicroSystems
Allegro MicroSystems, Inc.
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2 Megabit CMOS Flash Memory
Bulk Erase Flash Memory, 2Mb
|
http://
CATALYST[Catalyst Semiconductor]
|
| MF0512M-07BTXX MF0256M-07BTXX MF0128M-07BTXX MF064 |
256M X 16 FLASH 3.3V PROM CARD, 250 ns, XMA68
8/16-bit Data Bus Flash ATA PC Card 16位产品数据总线闪存阿拉木图PC
Triaxial Cable; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Foam HDPE; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
