PART |
Description |
Maker |
10-F1127PA035SC-L168E09 |
Compact Flow 1 housing
|
Vincotech
|
EDS6-65 |
COMPACT ELECTROMAGNETIC FLOWMETER(COMPACT FLOW, SEPARATE TYPE)
|
Fuji Electric
|
E3ZM-V |
Print mark detection photoelectric sensor in compact stainless steel housing
|
Omron Electronics LLC
|
EG1126 |
Integrated Flow Function, Off-LIne Flow Model PWM controller
|
Jingjing Microelectroni...
|
CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM 150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM 200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
15987-8 15987 |
HTSNK C X-FLOW. .911 LOW FLOW. THREADED HTSNK, C X-FLOW. .911 LOW FLOW. THREADED
|
VICOR[Vicor Corporation]
|
15960 15960-A |
HTSNK A X-FLOW .9H LOW FLOW THREADED HTSNK, A X-FLOW, .9H LOW FLOW, THREADED
|
VICOR[Vicor Corporation]
|
18068 18068-6 |
HTSNK A X-FLOW .4H LOW FLOW THRU HOLE HTSNK, A X-FLOW, .4H LOW FLOW, THRU HOLE
|
VICOR[Vicor Corporation]
|
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
CY7C1351F CY7C1351F-100AC CY7C1351F-100AI CY7C1351 |
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 11 ns, PBGA119 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PQFP100 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PBGA119 4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture 4-Mb (128K x 36) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|