| PART |
Description |
Maker |
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| 3SK0272 |
Gallium Arsenide Devices
|
Panasonic
|
| GN05013N |
Gallium Arsenide Devices
|
Panasonic
|
| GN01037B |
Gallium Arsenide Devices
|
Panasonic
|
| GN04005 |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0241 |
Gallium Arsenide Devices
|
Panasonic
|
| DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DMK3379-000-295-011 DMK3248-000-417-001 |
GALLIUM ARSENIDE, KU BAND, MIXER DIODE
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
