| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| RJP4002ANS RJP4002ANS-00-Q1 |
400 V, N-CHANNEL IGBT 3 X 4.40, 0.65 MM HEIGHT, ULTRA SMALL, PLASTIC, VSON-8
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4002ASA-00-Q0 RJP4002ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| GT15G101 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT8G136 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G101SM06 GT25G101SM |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT25G10106 GT25G101 |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT25G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| CT40KM-8H |
Transistors>IGBT>for Stlobe use
Nch IGBT for Strobe Flasher
|
RENESAS[Renesas Electronics Corporation]
|
