| PART |
Description |
Maker |
| EN2007C EN2007 |
Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single PCP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| NSS30100LT1G |
30V, 2A, Low VCE(sat) PNP Transistor(30V,2A,低VCE(sat)，PNP型晶体管) 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
30 V, 2 A, Low Vce(sat) PNP Transistor
|
ONSEMI[ON Semiconductor]
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| GB25RF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 PIM Package
|
International Rectifier
|
| NSS1C200LT1G |
100V 2A Low Vce(sat) PNP SOT-23 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
|
ON Semiconductor
|
| 2SB935A |
Low collector-emitter saturation voltage VCE(sat). High-speed switching.
|
TY Semiconductor Co., L...
|
| CMLM7405 |
MULTI DISCRETE MODULESURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| 2SC3515 |
High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.5V (max)
|
TY Semiconductor Co., L...
|
| 2SD1760 |
Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| CMLM0605 |
MULTI DISCRETE MODULESURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| 2SD601A |
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| 2SD2210 |
Low collector-emitter saturation voltage VCE(sat) High forward current transfer ratio hFE.
|
TY Semiconductor Co., L...
|
