| PART |
Description |
Maker |
| 2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
|
| 350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100 |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
|
International Rectifier
|
| IPT240 I3PT430 ISPT640 IPT130 |
TRIAC|200V V(DRM)|40A I(T)RMS|PRESS-19
TRIAC|400V V(DRM)|30A I(T)RMS|FBASE-R-HW30 可控硅| 400V五（DRM）的| 30A条口（T）的有效值| FBASE受体- HW30
TRIAC|600V V(DRM)|40A I(T)RMS|IST-3RT-1/4 可控硅| 600V的五（DRM）的| 40A条口（T）的有效值|北京时间- 3RT - 1 / 4
TRIAC|100V V(DRM)|30A I(T)RMS|PRESS-19
|
Electronic Theatre Controls, Inc.
|
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| Z0409MF/1AA2 Z0402MF/1AA2 Z0405MF/0AA2 Z0405MF/1AA |
TRIAC|600V V(DRM)|1A I(T)RMS|TO-202VAR
IC 2.5V SDRAM 256M (16M X 16) 7.5NS BGA-60
TRIAC|700V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 700V的五（DRM）的| 1A条口（T）的有效值|02VAR
IC PSRAM 16MB 48-VFBGA 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|02VAR
TRIAC|800V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|02VAR
|
Cooper Bussmann, Inc.
STMicroelectronics N.V.
|
| CQ92MT CQ92BT |
TRIAC|200V V(DRM)|800MA I(T)RMS|TO-92
TRIAC|600V V(DRM)|800MA I(T)RMS|TO-92 可控硅| 600V的五（DRM）的| 800mA的我（T）的有效值|92
|
Orion Fans
|
| NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
| BTB08-200AW |
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
|
LEM
|
| BT137B500T/R |
TRIAC|500V V(DRM)|8A I(T)RMS|SOT-404 可控硅| 500V五（DRM）的| 8A条口（T）的有效值|采用SOT - 404
|
Won-Top Electronics Co., Ltd.
|
| BTA140B500T/R |
TRIAC|500V V(DRM)|25A I(T)RMS|SOT-404 可控硅| 500V五（DRM）的| 25A条口（T）的有效值|采用SOT - 404
|
NXP Semiconductors N.V.
|
| CQ89NS CQ89DS CQ89MS CQ89BS |
2.0 AMP TRIAC 400 THRU 800 VOLTS
TRIAC|200V V(DRM)|2A I(T)RMS|SOT-89 可控硅| 200伏五（DRM）的|甲口（T）的有效值|采用SOT - 89
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
Infineon Technologies AG
|
| BTA212BSERIES BTA212_SERIES_B_1 BTA212-500B BTA212 |
Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack
TRIAC|500V V(DRM)|12A I(T)RMS|TO-220AB
From old datasheet system
|
NXP SEMICONDUCTORS
Philips
|
