PART |
Description |
Maker |
BLF7G22LS-100P |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- |
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty LDMOS Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
BLF7G24L-160P BLF7G24LS-160P |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
L88016-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
LQ801-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G20L-160P |
Power LDMOS transistor
|
Philips Semiconductors
|
BLF7G15LS-200 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|