PART |
Description |
Maker |
28F320S3 DT28F320S3-140 GT28F320S3-140 TE28F320S3- |
WORD-WIDE FlashFile MEMORY FAMILY Word-wide FlashFile memory. 32 Mbit, access speed 140 ns
|
Intel
|
E28F004S3-120 E28F004S3-150 PA28F008S3-150 TB28F00 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 2.7V PROM, 150 ns, PDSO44 BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 2.7V PROM, 120 ns, PDSO40 BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 2.7V PROM, 150 ns, PDSO44
|
Intel Corporation Intel Corp. Intel, Corp.
|
28F016SC G28F016SC-150 G28F008SC-150 TE28F008SC-10 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
|
Intel
|
PA28F004S3-120 PA28F004S3-150 PA28F008S3-120 PA28F |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
28F160S3 |
3 V FlashFile Memory(3 V FlashFile 存储
|
Intel Corp.
|
28F008SA 29042908 |
5 Volt FlashFile Memory From old datasheet system
|
Intel
|
HM530281RTT-34 HM530281RTT-45 HM530281RTT-20 HM530 |
34ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory 25ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory 20ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory 331,776-word x 8-bit Frame Memory
|
Hitachi Semiconductor
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
HM530281 HM530281TT HM530281TT-20 HM530281TT-25 HM |
331776 WORD X 8 BIT FRAME MEMORY 331,776 WORD X 8 BIT FRAME MEMORY
|
HITACHI[Hitachi Semiconductor]
|
TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY 32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation.
|
HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|