| PART |
Description |
Maker |
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| 2SC3515 E000852 |
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS) npn型三重扩散型（高压控制，等离子显示器，数码管驱动器，阴极射线管的亮度控制应用
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL/ PLASMA DISPLAY/ NIXIE TUBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
From old datasheet system
HIGH VOLYAGE CONTROL APPLICATIONS PLASMA DISPLAY,
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| IDK-2108R-K2SVA2E |
8.4 SVGA 1,200 cd/m2 Ultra High Brightness Industrial Display Kit with LED B/L
|
Advantech Co., Ltd.
|
| MSB31TK-1 |
ULTRA BRIGHT RED LED LAMP
ULTRA HIGH BRIGHTNESS RED LED LAMP
SOCKET, FREE, 7WAY; Connector type:Circular; Gender:Socket; Ways, No. of:7; Termination method:Screw terminal; Material, contact:Machined solid brass, nickel plated; Plating, contact:Nickel; Series:BUCCANEER; Contact style:Socket; RoHS Compliant: Yes
|
MICRO-ELECTRONICS[Micro Electronics]
|
| MAX16814BETP MAX16814AUV MAX16814BEUP MAX16814AUP |
Integrated, 4-Channel, High-Brightness LED Driver with High-Voltage DC-DC Controller
LED DISPLAY DRIVER, PDSO20
LED DISPLAY DRIVER, QCC20
|
MAXIM INTEGRATED PRODUCTS INC
|
| MIC2298-15YML MIC229811 |
3.5A Minimum, 1MHz Boost High Brightness White LED Driver LED DISPLAY DRIVER, QCC12
|
Micrel Semiconductor, Inc.
|
| 2SA1432 |
TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 851-02E123P50 |
SQUARE FLANGE RECEPT. 3 WAYS 方形法兰受体的3种方
|
Solid State Devices, Inc.
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
