| PART |
Description |
Maker |
| NTK3134N |
Power MOSFET, 20 V, 890 mA, Single N-Channel, SOT-723 Package, with ESD Protection
|
ON Semiconductor
|
| NTK3134N NTK3134NT1G NTK3134NT5G |
Power MOSFET(功率MOSFET) 功率MOSFET（功率MOSFET的）
POWER MOSFET 20 V, 890 MA, SINGLE N−CHANNEL WITH ESD PROTECTION, SOT−723
|
ON Semiconductor
|
| MHW932 |
32 W 890 to 915 MHz RF POWER AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| FF-1319A-13E |
2,278,890 Hrs @ 30C GB
|
JMK Inc.
|
| VSMF2893GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
| 0898CD15C1748 |
890/1748 MHz Dual Band Directional Coupler
|
Johanson Technology Inc.
|
| 0910-300M |
Bipolar/LDMOS Transistor
300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| TSSF4500 TSSF450008 |
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSMF100011 |
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
|
