| PART |
Description |
Maker |
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor
From old datasheet system
N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
| MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| IRG7PH35UD1MPBF |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4PC30WPBF IRG4PC30WPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG7PH46U-EP IRG7PH46UPBF |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
