PART |
Description |
Maker |
SBF13007 |
36W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces
|
SemiWell Semiconductor
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
CHT9013PT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC Corp. NEC[NEC]
|
2N7370E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
JANSM2N3439 JANSM2N3439L |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors Bipolar Junction Transistor SILICON PNP TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semiconductors New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
2N2905ALE3 JANSM2N2904AL |
PNP Transistor BJT( BiPolar Junction Transistor)
|
Microsemi
|
SBW13009 |
130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces High Voltage Fast-Switching NPN Power Transistor
|
SEMIWELL[SemiWell Semiconductor]
|
MMBT2131T1-D |
General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
|
ON Semiconductor
|
EC3A01H |
N-Channel Silicon Junction FET - Electret Condenser Microphone Applications Junction FETs
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|