| PART |
Description |
Maker |
| PHT41435B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| PHT41410B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| AT-41486 AT-41486-BLK |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AA028N1-99 |
230 GHz Low Noise Amplifier
GT 14C 10#12 4#16 SKT PLUG
23-30 GHz Low Noise Amplifier
|
Alpha Industries Inc
Alpha Industries, Inc.
ALPHA[Alpha Industries]
http://
|
| UPC1676G39 UPC1676G-T1 UPC1676PCHIP UPC1676P UPC16 |
1.2 GHZ BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER
|
NEC[NEC]
|
| MAAM12021 MAAM12021RTR MAAM12021SMB MAAM12021TR |
1.5-1.6 GHz, low noise amplifier
Low Noise Amplifier 1.5 - 1.6 GHz
GT 35C 7#12,28#16 SKT RECP
|
MA-Com
MACOM[Tyco Electronics]
|
| UPC1676G-T1 |
1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER 1.2千兆赫带宽，低噪声硅MMIC放大
|
NEC, Corp.
|
| BAT15-04 BAT15_04 Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) 硅双肖特基二极管（星展混频器应用12 GHz低噪声系数低屏障型）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| INA-30311 INA-30311-TR1 |
1 GHz Low Noise Silicon MMIC Amplifier
1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
