PART |
Description |
Maker |
CMLDM5757 |
SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS 430 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor Corp
|
2SK3230B |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM N-CHANNEL SILICON J-FET
|
NEC
|
CMLDM7002A |
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 280 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching 3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
ECH8602M |
6 A, 30 V, 0.031 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET N-Channel Silicon MOSFET
|
Sanyo Semicon Device
|
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
4AM15 |
Silicon N Channel/P Channel Power MOS FET Array From old datasheet system
|
hitachi
|
ENN8179 ECH8608 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
6AM12 |
Silicon N-channel/p-channel Complementary Power MOS Fet Array
|
Renesas
|
|