PART |
Description |
Maker |
ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压,大电流达林顿阵列 Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow High Voltage / High Current Darlington Transistor Arrays HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS (ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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List of Unclassifed Man... Electronic Theatre Controls, Inc. Sprague Electric ETC[ETC] List of Unclassifed Manufacturers VISHAY SPRAGUE
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TX2-5V TX2-12V TX2-3V TX2-L-1.5V TX2-48V TX2-L2-H- |
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 2阿继电器容量高浪涌电 RELAY, SOLID STATE 40A 240VAC FILM/M CAPACITANCE=0.1 VOLT=63 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE
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Nais(Matsushita Electric Wo... Panasonic, Corp. YEONHO Electronics Co., Ltd. NAIS[Nais(Matsushita Electric Works)] http://
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SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY High Voltage,High Density Fast Recovery Rectifier(反向电压4000V,温55℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压6000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压2000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
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Semtech Corporation
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2SC3675 |
900V/100mA High-Voltage Amplifier High-Voltage Switching Applications High-Voltage Amp, High-Voltage Switching Applications High-Voltage Amp High-Voltage Switching Applications High-Voltage Amp/ High-Voltage Switching Applications
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SANYO[Sanyo Semicon Device]
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2SA1967 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
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Sanyo
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2SC3645 |
High-Voltage Switching Applications Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
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TY Semicondutor TY Semiconductor Co., Ltd
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SA5-0A-D |
The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients
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Littelfuse
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2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS.
|
TOSHIBA
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2SC4476 |
NPN Triple Diffused Planar Silicon Transistor 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
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BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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2SC4257 0458 |
NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications From old datasheet system
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Sanyo
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