| PART |
Description |
Maker |
| STGW30NB60H 6668 |
N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 30A - 600V TO-247 PowerMESH TM IGBT
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| STGW20NC60VD |
N-CHANNEL 30A - 600V TO-247 HYPERFAST POWERMESH IGBT
N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| PM30RHC060 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)
Intellimod-3 Modules: Three Phase Brake, IGBT Inverter Output 30 Amp, 110-230 Volt Line
|
Powerex Power Semiconductors
|
| STGW30NB60HD |
N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 30A - 600V TO-247 PowerMESH TM IGBT
|
STMicroelectronics
ST Microelectronics
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| SGB04N60 SGU04N60 SGD04N60 SGP04N60 |
IGBTs & DuoPacks - 4A 600V TO 220AB IGBT
IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT
Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| RHRP3040 RHRP3060 FN3933 |
30A/ 400V - 600V Hyperfast Diodes
30A, 400V - 600V Hyperfast Diodes
30A 400V - 600V Hyperfast Diodes
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| ISL9K3060G ISL9K3060G3 ISL9K3060G3NL |
30A, 600V Stealth?/a> Dual Diode
30A, 600V Stealth Dual Diode
30A, 600V Stealth??Dual Diode
30A 600V Stealth Dual Diode
30A, 600V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| HGT1S3N60B3S HGT1S3N60B3S9A |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB
TRANS IGBT CHIP N-CH 600V 7A 3TO-263AB RAIL
|
Fairchild Semiconductor
|
