| PART |
Description |
Maker |
| PYA28C16BE-20CWM PYA28C16BE-20CWMB PYA28C16BE-20LM |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
|
Pyramid Semiconductor C...
|
| MJH11017 MJH11020 MJH11019 MJH11021 MJH11022 MJH11 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 / 200 / 250 VOLTS 150 WATTS
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 200 250 VOLTS 150 WATTS
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| SHM120F SHM140F SHM40F SHM60F SHM80F SHM100F SHM15 |
50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| CY14V104NA-BA25XIT CY14V104LA-BA25XI CY14V104LA-BA |
4-Mbit (512 K x 8 / 256 K x 16) nvSRAM 25 ns and 45 ns access times
|
http://
Cypress Semiconductor
|
| IDT84036 6116LA15SOGI8 6116LA20SOGI8 6116LA15TPGI8 |
5.0V 2K x 8 Asynchronous Static RAM
High-speed access and chip select times
|
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| T7000425 T7002025 T7000225 T7001335 T7002235 T7000 |
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 1200 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 1800 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 1000 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 470 A, 2000 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 600 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 200 V, SCR
Phase Control SCR (250-350 Amperes 200-2200 Volts) 第一阶段控制晶闸管（250-350安培200-2200伏特
Phase Control SCR (250-350 Amperes 200-2200 Volts) 550 A, 2200 V, SCR
|
Powerex Power Semicondu...
Powerex Power Semiconductor...
PHOENIX CONTACT Deutschland GmbH
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
|
| MJ15023 MJ15025 ON1984 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| BS108ZL1G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
ON Semiconductor
|
| SPD4948SM SPD4942SM SPD4943SM SPD4944SM SPD4945SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
