| PART |
Description |
Maker |
| PSMN027-100XS |
N-channel 100V 26.8 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| PSMN013-100XS |
N-channel 100V 13 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| BUK7M8R5-40H |
N-channel 40 V, 8.5 mstandard level MOSFET in LFPAK33
|
Nexperia
|
| BUK7K18-40E |
Dual N-channel 40 V, 19 mstandard level MOSFET
|
NXP Semiconductors
|
| BUK7K5R6-30E |
Dual N-channel 30 V, 5.6 mstandard level MOSFET
|
NXP Semiconductors
|
| BUK7K52-60E |
Dual N-channel 60 V, 45 mstandard level MOSFET
|
NXP Semiconductors
|
| IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
|
| IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements
100V, Combination 2N-2P-CHANNEL
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| IRF5N3710 |
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)
|
IRF[International Rectifier]
|
| FQD19N10L FQU19N10L FQD19N10LTF FQD19N10LTM |
GIGATRUE CAT6 UNIVERSAL JACK, WHITE
100V LOGIC N-Channel MOSFET
100V N-Channel Logic Level QFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| FQB19N10L FQI19N10L FQB19N10LTM |
100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
100V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
