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ENA1837 - Bipolar Transistor, 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML

ENA1837_8329719.PDF Datasheet


 Full text search : Bipolar Transistor, 200V, 0.7A, Low VCE(sat), NPN Single TO-126ML


 Related Part Number
PART Description Maker
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
ON Semiconductor
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
Bourns, Inc.
232219314159 PR01-3R9 PR02-330K PR01-1R PR01-22K P WIDERSTAND LEISTUNG METALL 15R 200V 1W
WIDERSTAND LEISTUNG METALL 3R9 200V 1W
WIDERSTAND LEISTUNG METALL 22K 200V 1W
WIDERSTAND LEISTUNG METALL 5R6 200V 1W
WIDERSTAND LEISTUNG METALL 4R7 200V 1W
WIDERSTAND LEISTUNG METALL 330R 200V 1W
WIDERSTAND LEISTUNG METALL 6R8 200V 1W
WIDERSTAND LEISTUNG METALL 22K 500V 2W
WIDERSTAND LEISTUNG METALL 470K 500V 2W
WIDERSTAND LEISTUNG METALL 220R 500V 2W
WIDERSTAND LEISTUNG METALL 1K5 500V 2W
WIDERSTAND LEISTUNG METALL 6R8 500V 2W
WIDERSTAND LEISTUNG METALL 100K 500V 2W
WIDERSTAND LEISTUNG METALL 18K 200V 1W
WIDERSTAND LEISTUNG METALL 100R 500V 2W
WIDERSTAND LEISTUNG METALL 220K 500V 2W
WIDERSTAND LEISTUNG METALL 3R3 500V 2W
WIDERSTAND LEISTUNG METALL 4R7 500V 2W
WIDERSTAND LEISTUNG METALL 5K6 200V 1W
WIDERSTAND LEISTUNG METALL 4K7 500V 2W
WIDERSTAND LEISTUNG METALL 3K3 500V 2W
WIDERSTAND LEISTUNG METALL 68R 200V 1W
WIDERSTAND LEISTUNG METALL 1M 500V 2W
WIDERSTAND LEISTUNG METALL 6K8 500V 2W
WIDERSTAND LEISTUNG METALL 1K 500V 2W WIDERSTAND给付000 500V 2W的金
WIDERSTAND LEISTUNG METALL 1R 200V 1W WIDERSTAND给付1W的金受体200
WIDERSTAND LEISTUNG METALL 150K 200V 1W WIDERSTAND给付1500W的金
WIDERSTAND LEISTUNG METALL 330K 500V 2W WIDERSTAND给付3300V 2W的金
WIDERSTAND LEISTUNG METALL 3K3 200V 1W WIDERSTAND给付1W的金3K3 200
WIDERSTAND LEISTUNG METALL 18R 200V 1W WIDERSTAND给付1W的金18受体200
WIDERSTAND LEISTUNG METALL 100R 200V 1W WIDERSTAND给付1W的金100R 200
WIDERSTAND LEISTUNG METALL 15K 500V 2W WIDERSTAND给付15000 500V 2W的金
WIDERSTAND LEISTUNG METALL 15R 500V 2W WIDERSTAND给付金属15R 500V 2W
WIDERSTAND LEISTUNG METALL 3K9 200V 1W WIDERSTAND给付1W的金K9 200
WIDERSTAND LEISTUNG METALL 470R 500V 2W WIDERSTAND给付金属470R 500V 2W
WIDERSTAND LEISTUNG METALL 15K 200V 1W
Vishay Intertechnology, Inc.
CommScope, Inc.
Applied Micro Circuits, Corp.
MicroEngineering Labs, Inc.
Welwyn Components, Ltd.
EAO International
STMicroelectronics N.V.
2SA1541D 2SA1541C 2SA1541E 2SC3956F 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 200MA I(C) | TO-126
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | TO-126 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 200mA的一(c)|26
STMicroelectronics N.V.
IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6A条(丁)| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 10A条(丁)|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五(巴西)直| 5A条(丁)|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 7A条(丁)|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五(巴西)直|3A条(丁)|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五(巴西)直| 5A条(丁)|220
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
STD5N20 3093 N - CHANNEL 200V - 0.7W - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.7 - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
From old datasheet system
SGS Thomson Microelectronics
STMicroelectronics
IRFB31N20D IRFS31N20DTRL Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
International Rectifier, Corp.
IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
IRF[International Rectifier]
STC03DE170HP07 STC03DE170HP Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
ST Microelectronics
STMicroelectronics
ACDSW21-G Small Signal Switching Diodes, V-RRM=200V, V-R=200V, P-D=250mW, I-F=200mA
Comchip Technology
 
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