| PART |
Description |
Maker |
| HS0-6254RH-Q HS1-6254RH HS-6254RH 5962F9764101VXC |
Radiation Hardened Ultra High Frequency
NPN Transistor Array(抗辐射甚高频NPN晶体管阵
1500PF 50V 0805
BJT
Radiation Hardened Ultra High Frequency NPN Transistor Array 辐射加固超高频NPN晶体管阵
|
Intersil Corporation
Intersil, Corp.
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SC5384 2SC5384-10 |
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corpora...
|
| ISL73096RH |
Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array
|
Intersil Corporation
|
| 5962F0721801V9A |
Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array
|
Intersil Corporation
|
| 2N2777 2N2769 |
Trans GP BJT NPN 250V 30A 3-Pin TO-63
Trans GP BJT NPN 150V 0.5A 3-Pin TO-39
|
New Jersey Semiconductor
|
| 2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
|
TOSHIBA
|
| KSC2690 KSC2690A |
NPN (AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| SPW |
Special Purpose, High Frequency Load (Tubes), High Stability and Excellent High Frequency Characteristics, Particularly Suited for High Frequency Applications
|
Vishay
|
| BDY23A BDY25A BDY25B BDY25C |
Trans GP BJT NPN 60V 6A 3-Pin(2 Tab) TO-3
Trans GP BJT NPN 140V 6A 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductor
|
| 2N1305 2N1306 2N1307 2N1308 |
Trans GP BJT PNP 0.3A
Trans GP BJT NPN 0.3A
|
New Jersey Semiconductor
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
