| PART |
Description |
Maker |
| AS1329B-BTTT |
Low Vol tage, Micropower, DC-DC Step-Up Conver ters
|
ams AG
|
| MFK2807D/883 MFK2805S/883 MFK2805D/883 MFK2812D/88 |
MFK S ingle and D ual D C-DC Converters 16 to 50 vol ts i npu t ?25 Watt
|
Interpoint Corporation ...
|
| NJU26105 |
AGC/eala BASS/T.cont/PEQ/Vol./HPF / QFP32-R1
|
JRC
|
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
| 970050151 970050351 970050321 970050361 970070151 |
AsSSTII Steel Spacer Stud with Metric Thread, internal/internal
|
Wurth Elektronik GmbH &...
|
| MSM66P56-XX MSM66P54-XX MSM6650 MSM6656A MSM6656-X |
Internal Mask ROM Voice Synthesis IC, Internal One-Time-Programmable (OTP) ROM
|
OKI
|
| MC10H131 MC10H131FN MC10H131L MC10H131P ON0753 |
Dual In/Single Out Autoswitching Power MUX, Manual/Auto Sw, Adj. Cur Limit, Adj. Vol Threshold 8-TSSOP -40 to 85 双D型主从触发器
Dual D Type Master-Slave Flip-Flop
From old datasheet system
|
Motorola, Inc
ONSEMI[ON Semiconductor]
|
| HY57V281620HCST-6I HY57V281620HCST-KI HY57V281620H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM
512K x 4 BANKS x 32 BITS SDRAM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
