| PART |
Description |
Maker |
| MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
| IS46LR32400G |
Four internal banks for concurrent operation
|
Integrated Silicon Solu...
|
| 2GB-AUTO-AS4C256M8D3 |
8 internal banks for concurrent operation
|
Alliance Semiconductor ...
|
| KBP306 KBP310 |
VOLTAGE RANGE 50 TO 1000 VOL TS
|
Gaomi Xinghe Electronic...
|
| AS1322 AS1322A-BTTT AS1322-13 AS1322B-BTTT |
Low Vol tage, Micropower, DC-DC Step-Up Conver ters
|
ams AG
|
| MC10H131 MC10H131FN MC10H131L MC10H131P ON0753 |
Dual In/Single Out Autoswitching Power MUX, Manual/Auto Sw, Adj. Cur Limit, Adj. Vol Threshold 8-TSSOP -40 to 85 双D型主从触发器
Dual D Type Master-Slave Flip-Flop
From old datasheet system
|
Motorola, Inc
ONSEMI[ON Semiconductor]
|
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MAX1027-MAX1031 MAX1029AEEP-T MAX1027AEEE-T MAX102 |
10-Bit 300ksps ADCs with FIFO, Temp Sensor, Internal Reference
-10-Bit 300ksps ADCs with FIFO,Temp Sensor, Internal Reference
10-Bit 300ksps ADCs with FIFO. Temp Sensor. Internal Reference 10位300ksps ADC，带有FIFO、温度传感器及内置基
10-Bit 300ksps ADCs with FIFO,Temp Sensor, Internal Reference 1000ksps速率ADC的带有FIFO，温度传感器，内部参
10-Bit 300ksps ADCs with FIFO,Temp Sensor, Internal Reference 8-CH 10-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO16
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
|
| K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
