| PART |
Description |
Maker |
| STL75NH3LL |
N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V, 0.004 ヘ, 20 A, PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STL50NH3LL07 STL50NH3LL |
N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
N-channel 30 V - 0.011 ヘ - 13 A - PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STL60NH3LL07 |
N-channel 30 V - 0.0065 楼? - 30 A - PowerFLAT垄芒 (6x5) ultra low gate charge STripFET垄芒 Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT?/a> (6x5) ultra low gate charge STripFET?/a> Power MOSFET
N-channel 30 V - 0.0065 Ω - 30 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET
|
STMicroelectronics
|
| STS12NH3LL STS12NH3LL07 |
N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET Power MOSFET
N-channel 30 V - 0.008 ヘ - 12 A - SO-8 ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STP23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
| STF10LN80K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| SPB11N60S5 SPB11N60S505 |
New revolutionary high voltage technology Ultra low gate charge
|
http://
|
| SPP07N60C309 SPA07N60C3 SPI07N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP17N80C3 SPP17N80C307 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| SPB21N50C3 SPB21N50C305 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| STL8NH3LL |
N-CHANNEL 30V - 0.012 Ohm - 8A - PowerFLAT ULTRA LOW GATE CHARGE STRIPFET MOSFET
|
ST Microelectronics
|
| S12NH3LL STS12NH3LL STS12NH3LL_06 STS12NH3LL06 |
N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
