Part Number Hot Search : 
AN001PG 3502W 10200CT 16237 LTC372 5251B 37000 P1N60E
Product Description
Full Text Search

GT40M101 - INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

GT40M101_8342023.PDF Datasheet

 
Part No. GT40M101
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

File Size 226.94K  /  5 Page  

Maker

TOSHIBA



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: GT40Q321
Maker: TOSHIBA(东芝)
Pack: TO-3P
Stock: 198
Unit price for :
    50: $2.51
  100: $2.39
1000: $2.26

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ GT40M101 Datasheet PDF Downlaod from Datasheet.HK ]
[GT40M101 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for GT40M101 ]

[ Price & Availability of GT40M101 by FindChips.com ]

 Full text search : INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS


 Related Part Number
PART Description Maker
IRG4BC40K Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International Rectifier, Corp.
IRF[International Rectifier]
GT40G121 Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
IRG4PH40U 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
International Rectifier, Corp.
IRF[International Rectifier]
GT15Q311 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
MGP11N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGW12N120D-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
ONSEMI[ON Semiconductor]
GT50J325 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
MGP15N60U Insulated Gate Bipolar Transistor
MOTOROLA[Motorola, Inc]
IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
 
 Related keyword From Full Text Search System
GT40M101 cantherm GT40M101 board GT40M101 receptacle GT40M101 MARKING GT40M101 Characteristic
GT40M101 saw filter GT40M101 gate GT40M101 semiconductor GT40M101 poliester GT40M101 control
 

 

Price & Availability of GT40M101

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.17752599716187