| PART |
Description |
Maker |
| STP80NS04ZB |
N-CHANNEL CLAMPED 7.5mohm - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STW130NS04ZB06 STP130NS04ZB STB130NS04ZB STB130NS0 |
N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STGB20NB37LZ |
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT N通道钳位20A条采用D2PAK IGBT的内部钳位PowerMESH
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STGB10NB40LZT4 STGB10NB40LZ |
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STGB20NB37LZ_03 GB20NB37LZ STGB20NB37LZ STGB20NB37 |
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB80NF55L-06 STB80NF55L-06T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| IRFZ46N IRFZ46 |
Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 16.5mohm，身份证\u003d 53A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFU4105Z IRFR4105Z |
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET（讥\u003d 55V的，的Rds（on）\u003d 24.5mohm，身份证\u003d 30A条）
Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FDS6692A |
N-Channel PowerTrench MOSFET 30V, 9A, 11.5mOhm
|
Fairchild Semiconductor
|
