| PART |
Description |
Maker |
| SSF2715 |
Extremely high dv/dt capability
|
Silikron Semiconductor Co.,LTD.
|
| CZTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
Central Semiconductor Corp
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| AP2121AK-1.5TRE1 AP2121AK-2.5TRE1 AP2121AK-2.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| AP2121AK-1.8TRE1 AP2121AK-2.5TRG1 AP2121AK-1.2TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CMPTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
