| PART |
Description |
Maker |
| KDV152 KDV152M |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL)
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB,C/P PLL) 变容二极管外延硅平面二极管（振荡器的文件，碳/磷锁相环
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| HVL355C |
6.82 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC397C |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
| HVD369B |
Variable Capacitance Diode for VCO
|
Zhaoxingwei Electronics ., Ltd
|
| HVC362 |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD350B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC350B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
| HVC355 HVC355B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
| HVC358B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
| HVC369B HVC369 |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
