| PART |
Description |
Maker |
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| TDA7265SA |
18W 18W STEREO AMPLIFIER WITH MUTE & ST-BY
|
意法半导
|
| RA18H1213G RA18H1213G-01 |
1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO 1.24 - 1.30GHz 18W 12.5V阶段制造。对于移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TGA2612 TGA2612-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2214 TGA2214-15 |
2 to 18 GHz 5W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TGA2958 |
13 to 18 GHz 2W GaN Driver Amplifier
|
TriQuint Semiconductor
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGHV1J070D |
70 W, 18.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CMPA601C025D |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
