| PART |
Description |
Maker |
| PHB50N03T PHB50N03 |
N-channel TrenchMOS transistor Logic level FET
TrenchMOS transistor Standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor
LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
| BUK7540-100A BUK7540-100A_1 |
TrenchMOS transistor Standard level FET
TrenchMOS TM transistor Standard level FET
From old datasheet system
TrenchMOS(tm) transistor Standard level FET
|
Philips Semiconductors
|
| BUK7535-55 |
TrenchMOS transistor Standard level FET
TrenchMOS transistor Standard level FET 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BUK552-100A BUK552-100B BUK552-100A/B |
POWERMOS TRANSISTOR LOGIC LEVEL FET
TRANSISTOR LOGIK MOSFET TO 220
|
NXP Semiconductors
Philips Semiconductors
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| PHB11N03LT PHB_PHD11N03LT_1 PHD11N03LT |
N-channel TrenchMOS transistor Logic level FET
From old datasheet system
N-channel TrenchMOS TM transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| IRFL9014 IRFL9014PBF |
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN, FET General Purpose Power
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
Vishay Siliconix
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
