PART |
Description |
Maker |
2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Low Vce(sat) Transistor (-20V, -3A) From old datasheet system Low VCE(sat) Transistor(低VCE(sat)晶体 Low Vce(sat) Transistor (-20V/ -3A)
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ROHM[Rohm] Rohm CO.,LTD.
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EN3235 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single NMP
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ON Semiconductor
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ZXTP26020DMFTA ZXTP26020DMF |
20V LOW VCE(SAT ) PNP SURFACE MOUNTED TRANSISTOR Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
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Diodes Incorporated
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2SD2144S 2SD2114K 2SD2114S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) 20V,0.5A high-current gain medium power transistor
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ROHM
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE. TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五(巴西)总裁| 5A条一(c)|26 1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
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Electronic Theatre Controls, Inc. Continental Device India Limited
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TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
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Bourns, Inc.
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2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
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ROHM[Rohm]
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BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
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ON Semiconductor
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
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Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
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CTN368 CTN369 |
1.000W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50 - hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 0.500A Ic, 50 - hFE
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Continental Device India Limited
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NEL230397 NEM2708B20 NEM2310B20 NEM1725B20 NEL2301 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | STX-M3 TRANSISTOR | BJT | NPN | 3.6A I(C) | RFMOD TRANSISTOR | BJT | NPN | 7.2A I(C) | RFMOD 晶体管|晶体管|叩| 7.2AI(丙)| RFMOD TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 600MA I(C) | STX-M3 晶体管|晶体管|叩| 20V的五(巴西)总裁| 600毫安一(c)|希捷- M3 TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-57CVAR 晶体管|晶体管|叩| 4.5AI(丙)|7CVAR
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Abracon, Corp. Renesas Electronics, Corp.
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