| PART |
Description |
Maker |
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| ICE3BR0365 |
Design Guide for Off-line Fixed Frequency DCM Flyback Converter
|
Infineon Technologies AG
|
| BB811 Q62702-B478 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units)
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units)
From old datasheet system
|
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| BB833 Q62702-B628 |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz special design for use in TV-SAT indoor units)
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units)
|
Siemens Group
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
|
| BUL76B BUL74A BUL76A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL50A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
TT electronics Semelab Limited
|
| BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
