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RJH60D2DPP-M0-15 - 600V - 12A - IGBT Application: Inverter

RJH60D2DPP-M0-15_8372964.PDF Datasheet


 Full text search : 600V - 12A - IGBT Application: Inverter
 Product Description search : 600V - 12A - IGBT Application: Inverter


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HGTP12N60D1 12A/ 600V N-Channel IGBT
Intersil Corporation
IRG4BC30U-S INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCES和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条)
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International Rectifier, Corp.
STW12NB60 7799 12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
CONNECTOR ACCESSORY
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
From old datasheet system
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
RJH60D0DPQ-E0 RJH60D0DPQ-E0-T2 600V - 22A - IGBT Application: Inverter
Renesas Electronics Corporation
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Renesas Electronics Corporation
RJH60D1DPP-E0-15 600V - 10A - IGBT Application: Inverter
Renesas Electronics Corporation
RJH60D5BDPQ-E0 RJH60D5BDPQ-E0-15 600V - 37A - IGBT Application: Inverter
Renesas Electronics Corporation
HGTP2N120BND HGT1S2N120BNDS HGT1S2N120BNDS9A 12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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INTERSIL[Intersil Corporation]
Intersil, Corp.
MG360V1US41 E002277 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
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From old datasheet system
Toshiba Corporation
Toshiba Semiconductor
HGT1Y40N60B3D TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
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FAIRCHILD[Fairchild Semiconductor]
 
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