| PART |
Description |
Maker |
| GRM0335C1E560JA01 GRM0335C1E560JA01W GRM0335C1E560 |
Temperature characteristics (complied standard)
|
Murata Manufacturing Co...
|
| BYZ35K47 BYZ35A22 BYZ35A27 BYZ35A33 BYZ35A39 BYZ35 |
Silicon Protectifiers with TVS characteristics High-temperature diodes
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| BYZ35A22 BYZ35A2206 BYZ35A27 BYZ35A33 BYZ35A37 BYZ |
Silicon Protectifiers with TVS characteristics High-temperature diodes
|
Semikron International
|
| BYZ50K47 BYZ50A22 BYZ50A27 BYZ50A33 BYZ50A39 BYZ50 |
Precision 1 A regulators
Silicon Protectifiers with TVS characteristics High-temperature diodes
|
DIOTEC SEMICONDUCTOR AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| GRM0225C1E5R3BDAE GRM0225C1E5R2DDAE GRM0225C1E5R7B |
Rated voltage
Temperature characteristics (complied standard)
Operating temperature range
|
Murata Manufacturing Co...
|
| BTS244Z BTS244-Z |
Transient Voltage Suppressor Diodes
Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics)
|
Infineon Technologies AG
|
| KMD6D0DN40Q |
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.
|
KEC(Korea Electronics)
|
| GRM0225C1ER50BDAE GRM0225C1ER80BDAE GRM0225C1E5R6W |
Temperature characteristics (complied standard)
Rated voltage
|
Murata Manufacturing Co...
|
| XC3S200A-4VQG100C TQG144 XC3S50A XC3S200A-4FTG256C |
Architectural and Configuration Overview
Spartan-3A FPGA Family
DC Electrical Characteristics
DC and Switching Characteristics
|
Xilinx, Inc
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| MB3015USB-4 |
Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20°C, RH=65%)
Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20隆?C, RH=65%)
|
Knowles Electronics
|
