| PART |
Description |
Maker |
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| STB15N80K5 STP15N80K5 STF15N80K5 |
N-channel 800 V, 0.3 ohm typ., 14 A SuperMESH 5 Power MOSFET
|
STMicroelectronics
|
| STP45N65M5 STW45N65M5 STB45N65M5 STF45N65M5 |
N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET
N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
|
STMicroelectronics
|
| STU5N52K3 |
N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3(TM) Power MOSFET in IPAK package
|
ST Microelectronics
|
| STD100N3LF3 |
N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package
|
ST Microelectronics
|
