| PART |
Description |
Maker |
| 1N4793A 1N4815B 1N4800A 1N4815A 1N4794A 1N4805 1N4 |
Diode VAR Cap Single 22V 27pF 2-Pin DO-7
Diode VAR Cap Single 22V 100pF 2-Pin DO-7
Diode VAR Cap Single 17V 100pF 2-Pin DO-7
Diode VAR Cap Single 22V 33pF 2-Pin DO-7
Diode VAR Cap Single 110V 15pF 2-Pin DO-7
Diode VAR Cap Single 99V 18pF 2-Pin DO-7
Diode VAR Cap Single 22V 18pF 2-Pin DO-7
Diode VAR Cap Single 72V 27pF 2-Pin DO-7
Diode VAR Cap Single 28V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 22V 22pF 2-Pin DO-7
Diode VAR Cap Single 22V 47pF 2-Pin DO-7
Diode VAR Cap Single 28V 10pF 2-Pin DO-7
Diode VAR Cap Single 110V 10pF 2-Pin DO-7
Diode VAR Cap Single 28V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 55V 47pF 2-Pin DO-7
Diode VAR Cap Single 33V 68pF 2-Pin DO-7
Diode VAR Cap Single 61V 39pF 2-Pin DO-7
|
New Jersey Semiconductor
|
| 1N5692B 1N5692A 1N5687B 1N5693B |
Diode VAR Cap Single 30V 56pF 2-Pin DO-7
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
Diode VAR Cap Single 30V 68pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| K3020P05 K3023P K3023PG K3020P K3020PG K3021P K302 |
Optocoupler, Phototriac Output, 400 V VDRM
|
Vishay Siliconix
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| PC3SD21NTZ04 PC3SD21NTZBF PC3SD21NXZCF |
VDRM : 600V Zero cross type DIP 6pin Phototriac Coupler for triggering
|
Sharp Electrionic Components
|
| K3020PG |
K3020P, K3020PG Series Optocoupler, Phototriac Output, Non-Zero Crossing, 400 VDRM
|
Vishay Semiconductors
|
| PC3ST11NSZ |
VDRM : 600V, Non-zero cross type DIP 4pin Phototriac Coupler for triggering
|
Sharp Electrionic Components
|
| BSM101AR C67076-S1018-A2 BSM101 |
From old datasheet system
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 50 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BSM50GD120DN2 C67076-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM35GD120D2 035D12D2 C67076-A2506-A17 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
From old datasheet system
|
TE Connectivity, Ltd.
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
