| PART |
Description |
Maker |
| IKW30N65ES5 IKW30N65ES5-15 |
high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| PG-TO220-3-FP IKA08N65F5 |
High speed 5 FAST IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft anti parallel diode
|
Infineon Technologies AG
|
| IXYP20N120C3 IXYH20N120C3 IXYA20N120C3HV |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| IXYH30N120C3 IXYP30N120C3 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IGP30N65F5 |
650V IGBT high speed switching series fifth generation
|
Infineon Technologies A...
|
