PART |
Description |
Maker |
ENA0412A |
Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
2N3810HRT 2N3810HRG |
Hi-Rel PNP Dual Matched Bipolar Transistor 60V - 0.05A
|
ST Microelectronics
|
BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
BDX14S |
Bipolar PNP Device in a Hermetically sealed TO66 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-213AA
|
Seme LAB
|
2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor Bipolar Transistor Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
EN3096A 2SC4489T-AN |
Bipolar Transistor Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
2SB1561 |
Medium Power Transistor (-60V -2A 60V 2A)
|
ROHM[Rohm]
|
2SC4500L 2SC4500S 2SC4500L/S |
SMALL SIGNAL TRANSISTOR TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-251AA 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁| 1A条一c)|52AA TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-252AA Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SB1184 2SB1185 2SB1243 A5800349 2SB1185F |
Power Transistor (-60V, -3A) From old datasheet system Power Transistor (-60V/ -3A)
|
Rohm
|
GET4870 GET4871 MPS2906A GES2906A GES2904 GES2905A |
UNIJUNCTION TRANSISTOR|5UA I(P)|TO-18VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 350MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-92 晶体管|晶体管|进步党| 40V的五(巴西)总裁| 600毫安一(c)|2 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-92 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 600毫安一(c)|2 UNIJUNCTION TRANSISTOR|2UA I(P)|TO-92 单结晶体管|五成一(规划)|2
|
Cornell Dubilier Electronics, Inc. Mitel Networks, Corp. GE Security, Inc.
|