| PART |
Description |
Maker |
| IS43R16160-6TL |
Auto refresh and Self refresh
|
Integrated Silicon Solu...
|
| IS42RM16200D IS42VM16200D |
Auto refresh and self refresh
|
Integrated Silicon Solu...
|
| HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W181 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
|
Hitachi Semiconductor
|
| IS42SM32100D IS42VM32100D |
Auto refresh and self refresh
|
Integrated Silicon Solu...
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
|
Samsung Electronic
Samsung semiconductor
|
| LT3420 LT3420EMSTRPBF LT3420-1 |
Photoflash Capacitor Chargers with Automatic Refresh
Photoflash Capacitor Chargers with Automatic Refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 125°C SPECIALTY ANALOG CIRCUIT, PDSO10
|
Linear Technology, Corp.
Linear Technology Corporation
|
| HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6 |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位）2刷新
|
Hitachi,Ltd.
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| IS45S86400F IS42S86400F |
8K refresh cycles every 64 ms
|
Integrated Silicon Solu...
|
| MT4C4001 MT4C4001J-6 MT4C4001J-7 MT4C4001J-8 MT4C4 |
standard or self refresh 标准或自刷新
|
Micron Technology, Inc.
MICRON[Micron Technology]
|
