PART |
Description |
Maker |
RJ45-6LC1-B RJ45-6LC1-S RJ45-6LC2-B RJ45-6LC2-S RJ |
TYPICAL INSERTION LOSS IN DB LINE-TO-GROUND (STOP BAND) IN A 50 OHM CIRCUIT 典型插入损耗在DB线对地(阻带)在一50欧姆电路 TYPICAL INSERTION LOSS IN DB LINE-TO-GROUND (STOP BAND) IN A 50 OHM CIRCUIT 典型插入损耗在DB线对地(阻带)在一0欧姆电路
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Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC]
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MMBTA20LT1_D ON2135 MMBTA20 |
40 AMP MINI-ISO AUTOMOTIVE RELAY TYPICAL STATIC CHARACTERISTICS From old datasheet system General Purpose Amplifier
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Motorola, Inc. ON Semi
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BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
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Siemens Semiconductor Group
|
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
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Siemens Semiconductor Group
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MCP606-I/P MCP606-I/SN MCP606-I/ST MCP609-I/P MCP6 |
The MCP606 operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 and ... The MCP609 quad operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 ... The MCP608 operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 and ... The MCP607 dual operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 ... 2.5V TO 5.5V MICROPOWER CMOS OP AMPS
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Microchip Technology Inc.
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ADG1604 ADG1604BCPZ-REEL ADG1604BCPZ-REEL7 ADG1604 |
1 Ω Typical On Resistance, ±5 V, 12 V, 5 V, and 3.3 V, 4:1 Multiplexer 1 楼? Typical On Resistance, 隆戮5 V, 12 V, 5 V, and 3.3 V, 4:1 Multiplexer
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Analog Devices
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NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
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NTE[NTE Electronics]
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IRH015020LW02 IRJ008010LW02 IRJ015020LW02 IRH05405 |
1500 MHz - 2000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX 800 MHz - 1000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX 5400 MHz - 5900 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX 9500 MHz - 10500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8 dB CONVERSION LOSS-MAX 2300 MHz - 2500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX 8500 MHz - 9600 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8 dB CONVERSION LOSS-MAX 2000 MHz - 4000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX 12000 MHz - 15000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8.5 dB CONVERSION LOSS-MAX 2100 MHz - 2300 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX 3700 MHz - 4200 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX 1000 MHz - 2000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX 16000 MHz - 19000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 9 dB CONVERSION LOSS-MAX 10000 MHz - 12000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8.5 dB CONVERSION LOSS-MAX
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MITEQ INC
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GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes) Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
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PANJIT[Pan Jit International Inc.] PanJit International Inc.
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