PART |
Description |
Maker |
46225-5024 45840-2001 75555-2001 75548-6040 46079- |
EXTreme Power-Mass?/a> High-Current Connector Board-to-Board Applications EXTreme Power-Mass High-Current Connector Board-to-Board Applications EXTreme Power-Mass垄芒 High-Current Connector Board-to-Board Applications
|
Molex Electronics Ltd.
|
WTF11-2P2431 |
Photoelectric proximity sensor, energetic
|
SICK AG
|
SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存??? 5.5 A, 16000 V, SILICON, RECTIFIER DIODE High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V,温5℃时平均整流电流5.5A,高压,大电流,高密度,标准恢复整流 STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
Q62702-C2134 BCP28 BCP48 Q62702-C2135 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BCP72 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
CMSSH-3E CMSSH-3SE CMSSH-3AE CMSSH-3CE |
SMD Schottky Diode Dual: High Current: Common Anode SMD Schottky Diode Dual: High Current: Common Cathode SMD Schottky Diode Dual: High Current: In Series SMD Schottky Diode Single: High Current ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
BCR400R Q62702-C2479 |
From old datasheet system Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
BC637 |
NPN Silicon AF Transistors (High current gain High collector current)
|
Siemens Semiconductor G...
|
SPP07N60C309 SPA07N60C3 SPI07N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPA20N60CFD09 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
|
Infineon Technologies AG
|
SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|