| PART |
Description |
Maker |
| UPD44324085F5-E50-EQ2 UPD44324365F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44324085F5-E33-EQ2 UPD44324185F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 36M条位条DDRII SRAM的分离I / O 2字爆发运
|
NEC Corp.
NEC, Corp.
|
| UPD44325082 UPD44325082F5-E50-EQ2 UPD44325092F5-E5 |
36M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC Corp.
|
| GS8180S18 |
1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位独立I/O接口双数据速率读和写模式静态ΣRAM) 1x 18位独立的I / O西格玛的DDR SRAM的（100万18位独立的I / O接口双数据速率读和写模式静态ΣRAM
|
GSI Technology, Inc.
|
| CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
| CY7C1429JV18-250BZC CY7C1429JV18-250BZI CY7C1429JV |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1423AV18-250BZC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Analog Integrations, Corp.
|
| GS8662T18GE-267 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
