PART |
Description |
Maker |
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
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IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
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General Electric Solid State GE Solid State
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MAX11014BGTMT MAX11015BGTM |
Automatic RF MESFET Amplifier Drain-Current Controllers Automatic RF MESFET Amplifier Drain-Current Controllers SPECIALTY CONSUMER CIRCUIT, PQCC48
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Maxim Integrated Produc... Maxim Integrated Products, Inc.
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STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
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2SK635 |
Drain Current ?ID=3A@ TC=25C
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Inchange Semiconductor ...
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2SK1171 |
Drain Current ?ID=4A@ TC=25C
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Inchange Semiconductor ...
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2SK1602 |
Drain Current ?ID= 2.8A@ TC=25C
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Inchange Semiconductor ...
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2SK934 |
Drain Current ?ID=8A@ TC=25C
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Inchange Semiconductor ...
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2N80 |
Drain Current ID= 2.4A@ TC=25C
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Inchange Semiconductor ...
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